c-Axis Aligned 3 nm Thick In2O3 Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-off.

Oxide semiconductors (OS) are attractive materials for memory and logic device applications owing to their low off-current, high field effect mobility, and superior large-area uniformity. Recently, successful research has reported the high field-effect mobility (µFE) of crystalline OS channel transistors (above 50 cm2 V-1 s-1). However, the memory and logic device application presents challenges in mobility and stability trade-offs. Here, we propose a method for achieving high-mobility and high-stability by lowering the grain boundary effect. A DBADMIn precursor was synthesized to deposit highly c-axis-aligned C(222) crystalline 3 nm thick In2O3 films. In this study, the 250 °C deposited 3 nm thick In2O3 channel transistor exhibited high µFE of 41.12 cm2 V-1 s-1, Vth of -0.50 V, and SS of 150 mV decade-1 with superior stability of 0.16 V positive shift during PBTS at 100 °C, 3 MV cm-1 stress conditions for 3 h.

Orientation-Guided Immobilization of Probe DNA on swCNT-FET for Enhancing Sensitivity of EcoRV Detection.

We present a novel approach that integrates electrical measurements with molecular dynamics (MD) simulations to assess the activity of type-II restriction endonucleases, specifically EcoRV. Our approach employs a single-walled carbon nanotube field-effect transistor (swCNT-FET) functionalized with the EcoRV substrate DNA, enabling the detection of enzymatic cleavage events. Notably, we leveraged the methylene blue (MB) tag as an "orientation guide" to immobilize the EcoRV substrate DNA in a specific direction, thereby enhancing the proximity of the DNA cleavage reaction to the swCNT surface and consequently improving the sensitivity in EcoRV detection. We conducted computational modeling to compare the conformations and electrostatic potential (ESP) of MB-tagged DNA with its MB-free counterpart, providing strong support for our electrical measurements. Both conformational and ESP simulations exhibited robust agreement with our experimental data. The inhibitory efficacy of the EcoRV inhibitor aurintricarboxylic acid (ATA) was also evaluated, and the selectivity of the sensing device was examined.

Multidimensional Deep Ultraviolet (DUV) Synapses Based on Organic/Perovskite Semiconductor Heterojunction Transistors for Antispoofing Facial Recognition Systems.

Reliably discerning real human faces from fake ones, known as antispoofing, is crucial for facial recognition systems. While neuromorphic systems offer integrated sensing-memory-processing functions, they still struggle with efficient antispoofing techniques. Here we introduce a neuromorphic facial recognition system incorporating multidimensional deep ultraviolet (DUV) optoelectronic synapses to address these challenges. To overcome the complexity and high cost of producing DUV synapses using traditional wide-bandgap semiconductors, we developed a low-temperature (≤70 °C) solution process for fabricating DUV synapses based on PEA2PbBr4/C8-BTBT heterojunction field-effect transistors. This method enables the large-scale (4-in.), uniform, and transparent production of DUV synapses. These devices respond to both DUV and visible light, showing multidimensional features. Leveraging the unique ability of the multidimensional DUV synapse (MDUVS) to discriminate real human skin from artificial materials, we have achieved robust neuromorphic facial recognition with antispoofing capability, successfully identifying genuine human faces with an accuracy exceeding 92%.

Mass Production of Carbon Nanotube Transistor Biosensors for Point-of-Care Tests.

Low-dimensional semiconductor-based field-effect transistor (FET) biosensors are promising for label-free detection of biotargets while facing challenges in mass fabrication of devices and reliable reading of small signals. Here, we construct a reliable technology for mass production of semiconducting carbon nanotube (CNT) film and FET biosensors. High-uniformity randomly oriented CNT films were prepared through an improved immersion coating technique, and then, CNT FETs were fabricated with coefficient of performance variations within 6% on 4-in. wafers (within 9% interwafer) based on an industrial standard-level process. The CNT FET-based ion sensors demonstrated threshold voltage standard deviations within 5.1 mV at each ion concentration, enabling direct reading of the concentration information based on the drain current. By integrating bioprobes, we achieved detection of biosignals as low as 100 aM through a plug-and-play portable detection system. The reliable technology will contribute to commercial applications of CNT FET biosensors, especially in point-of-care tests.

Abnormal Silicon Etching Behaviors in Nanometer-Sized Channels.

Modern semiconductor fabrication is challenged by difficulties in overcoming physical and chemical constraints. A major challenge is the wet etching of dummy gate silicon, which involves the removal of materials inside confined spaces of a few nanometers. These chemical processes are significantly different in the nanoscale and bulk. Previously, electrical double-layer formation, bubble entrapment, poor wettability, and insoluble intermediate precipitation have been proposed. However, the exact suppression mechanisms remain unclear due to the lack of direct observation methods. Herein, we investigate limiting factors for the etching kinetics of silicon with tetramethylammonium hydroxide at the nanoscale by using liquid-phase transmission electron microscopy, three-dimensional electron tomography, and first-principles calculations. We reveal suppressed chemical reactions, unstripping phenomena, and stochastic etching behaviors that have never been observed on a macroscopic scale. We expect that solutions can be suggested from this comprehensive insight into the scale-dependent limiting factors of fabrication.

Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors.

Tungsten oxide (WO3) doped indium oxide (IWO) field-effect transistors (FET), synthesized using atomic layer deposition (ALD) for three-dimensional integration and back-end-of-line (BEOL) compatibility, are demonstrated. Low-concentration (1∼4 W atom %) WO3-doping in In2O3 films is achieved by adjusting cycle ratios of the indium and tungsten precursors with the oxidant coreactant. Such doping suppresses oxygen deficiency from In2O2.5 to In2O3 stoichiometry with only 1 atom % W, allowing devices to turn off stably and enhancing threshold voltage stability. The ALD IWO FETs exhibit superior performance, including a low subthreshold slope of 67 mV/decade and negligible hysteresis. Strong tunability of the threshold voltage (Vth) is achieved through W concentration tuning, with 2 atom % IWO FETs showing an optimized Vth for enhancement-mode and a high drain current. ALD IWO FETs have remarkable stability under bias stress and nearly ideal performance extending to sub-100 nm channel lengths, making them promising candidates for high-performance monolithic 3D integrated devices.

Boosting Monolayer Transition Metal Dichalcogenides Growth by Hydrogen-Free Ramping during Chemical Vapor Deposition.

The controlled vapor-phase synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) is essential for functional applications. While chemical vapor deposition (CVD) techniques have been successful for transition metal sulfides, extending these methods to selenides and tellurides often faces challenges due to uncertain roles of hydrogen (H2) in their synthesis. Using CVD growth of MoSe2 as an example, this study illustrates the role of a H2-free environment during temperature ramping in suppressing the reduction of MoO3, which promotes effective vaporization and selenization of the Mo precursor to form MoSe2 monolayers with excellent crystal quality. As-synthesized MoSe2 monolayer-based field-effect transistors show excellent carrier mobility of up to 20.9 cm2/(V·s) with an on-off ratio of 7 × 107. This approach can be extended to other TMDs, such as WSe2, MoTe2, and MoSe2/WSe2 in-plane heterostructures. Our work provides a rational and facile approach to reproducibly synthesize high-quality TMD monolayers, facilitating their translation from laboratory to manufacturing.

Toward the Ultimate Limit of Analyte Detection, in Graphene-Based Field-Effect Transistors.

The ultimate sensitivity of field-effect-transistor (FET)-based devices for ionic species detection is of great interest, given that such devices are capable of monitoring single-electron-level modulations. It is shown here, from both theoretical and experimental perspectives, that for such ultimate limits to be approached the thermodynamic as well as kinetic characteristics of the (FET surface)-(linker)-(ion-receptor) ensemble must be considered. The sensitivity was probed in terms of optimal packing of the ensemble, through a minimal charge state/capacitance point of view and atomic force microscopy. Through the fine-tuning of the linker and receptor interaction with the sensing surface, a record limit of detection as well as specificity in the femtomolar range, orders of magnitude better than previously obtained and in excellent accord with prediction, was observed.

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory.

Logic-in-memory (LIM) architecture holds great potential to break the von Neumann bottleneck. Despite the extensive research on novel devices, challenges persist in developing suitable engineering building blocks for such designs. Herein, we propose a reconfigurable strategy for efficient implementation of Boolean logics based on a hafnium oxide-based ferroelectric field effect transistor (HfO2-based FeFET). The logic results are stored within the device itself (in situ) during the computation process, featuring the key characteristics of LIM. The fast switching speed and low power consumption of a HfO2-based FeFET enable the execution of Boolean logics with an ultralow energy of lower than 8 attojoule (aJ). This represents a significant milestone in achieving aJ-level computing energy consumption. Furthermore, the system demonstrates exceptional reliability with computing endurance exceeding 108 cycles and retention properties exceeding 1000 s. These results highlight the remarkable potential of a FeFET for the realization of high performance beyond the von Neumann LIM computing architectures.

Ultra-High-k Ferroelectric BaTiO3 Perovskite in the Gate Stack for Two-Dimensional WSe2 p-Type High-Performance Transistors.

The experimental demonstration of a p-type 2D WSe2 transistor with a ferroelectric perovskite BaTiO3 gate oxide is presented. The 30 nm thick BaTiO3 gate stack shows a robust ferroelectric hysteresis with a remanent polarization of 20 µC/cm2 and further enables a capacitance equivalent thickness of 0.5 nm in the hybrid WSe2/BaTiO3 stack due to its high dielectric constant of 323. We demonstrate one of the best ON currents for perovskite gate 2D transistors in the literature. This is enabled by high-quality epitaxial growth of BaTiO3 and a single 2D layer transfer based fabrication method that is shown to be amenable to silicon platforms. This demonstration is an important milestone toward the integration of crystalline complex oxides with 2D channel materials for scaled CMOS and low-voltage ferroelectric logic applications.

Antimony-Platinum Modulated Contact Enabling Majority Carrier Polarity Selection on a Monolayer Tungsten Diselenide Channel.

We develop a novel metal contact approach using an antimony (Sb)-platinum (Pt) bilayer to mitigate Fermi-level pinning in 2D transition metal dichalcogenide channels. This strategy allows for control over the transport polarity in monolayer WSe2 devices. By adjustment of the Sb interfacial layer thickness from 10 to 30 nm, the effective work function of the contact/WSe2 interface can be tuned from 4.42 eV (p-type) to 4.19 eV (n-type), enabling selectable n-/p-FET operation in enhancement mode. The shift in effective work function is linked to Sb-Se bond formation and an emerging n-doping effect. This work demonstrates high-performance n- and p-FETs with a single WSe2 channel through Sb-Pt contact modulation. After oxide encapsulation, the maximum current density at |VD| = 1 V reaches 170 µA/µm for p-FET and 165 µA/µm for n-FET. This approach shows promise for cost-effective CMOS transistor applications using a single channel material and metal contact scheme.

SiX2 (X = S, Se) Nanowire Gate-All-Around MOSFETs for Sub-5 nm Applications.

The gate-all-around (GAA) field-effect transistor (FET) holds great potential to support next-generation integrated circuits. Nanowires such as carbon nanotubes (CNTs) are one important category of channel materials in GAA FETs. Based on first-principles investigations, we propose that SiX2 (X = S, Se) nanowires are promising channel materials that can significantly elevate the performance of GAA FETs. The sub-5 nm SiX2 (X = S, Se) nanowire GAA FETs exhibit excellent ballistic transport properties that meet the requirements of the 2013 International Technology Roadmap for Semiconductors (ITRS). Compared to CNTs, they are also advantageous or at least comparable in terms of gate controllability, device dimensions, etc. Importantly, SiSe2 GAA FETs show superb gate controllability due to the ultralow minimum subthreshold swing (SSmin) that breaks "Boltzmann's tyranny". Moreover, the energy-delay product (EDP) of SiX2 GAA FETs is significantly lower than that of the CNT FETs. These features make SiX2 nanowires ideal channel material in the sub-5 nm GAA FET devices.

Nanostructured Molecular Packing of Polymer Films Formed on Water Surfaces.

In this study, we examined the nanostructured molecular packing and orientations of poly[[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)] (P(NDI2OD-T2)) films formed on water for the application of nanotechnology-based organic electronic devices. First, the nanoscale molecule-substrate interaction between the polymer and water was modulated by controlling the alkyl side chain length in NDI-based copolymers. Increasing alkyl side chain lengths induced a nanomorphological transition from face-on to edge-on orientation, confirmed by molecular dynamics simulations revealing nanostructural behavior. Second, the nanoscale intermolecular interactions of P(NDI2OD-T2) were controlled by varying the volume ratio of the high-boiling-point additive solvent in the binary solvent blends. As the additive solvent ratio increased, the nanostructured molecular orientation of the P(NDI2OD-T2) films on water changed remarkably from edge-on to bimodal with more face-on crystallites, thereby affecting charge transport. Our finding provides essential insights for precise nanoscale morphological control on water substrates, enabling the formation of high-performance polymer films for organic electronic devices.

Achieving Ideal and Environmentally Stable n-Type Charge Transport in Polymer Field-Effect Transistors.

Realizing ideal charge transport in field-effect transistors (FETs) of conjugated polymers is crucial for evaluating device performance, such as carrier mobility and practical applications of conjugated polymers. However, the current FETs using conjugated polymers as the active layers generally show certain non-ideal transport characteristics and poor stability. Here, ideal charge transport of n-type polymer FETs is achieved on flexible polyimide substrates by using an organic-inorganic hybrid double-layer dielectric. Deposited conjugated polymer films show highly ordered structures and low disorder, which are supported by grazing-incidence wide-angle X-ray scattering, near-edge X-ray absorption fine structure, and molecular dynamics simulations. Furthermore, the organic-inorganic hybrid double-layer dielectric provides low interfacial defects, leading to excellent charge transport in FETs with high electron mobility (1.49 ± 0.46 cm2 V-1 s-1) and ideal reliability factors (102 ± 7%). Fabricated polymer FETs show a self-encapsulation effect, resulting in high stability of the FET charge transport. The polymer FETs still work with high mobility above 1 cm2 V-1 s-1 after storage in air for more than 300 days. Compared with state-of-the-art conjugated polymer FETs, this work simultaneously achieves ideal charge transport and environmental stability in n-type polymer FETs, facilitating rapid device optimization of high-performance polymer electronics.

Machine Learning Discrimination and Ultrasensitive Detection of Fentanyl Using Gold Nanoparticle-Decorated Carbon Nanotube-Based Field-Effect Transistor Sensors.

The opioid overdose crisis is a global health challenge. Fentanyl, an exceedingly potent synthetic opioid, has emerged as a leading contributor to the surge in opioid-related overdose deaths. The surge in overdose fatalities, particularly due to illicitly manufactured fentanyl and its contamination of street drugs, emphasizes the urgency for drug-testing technologies that can quickly and accurately identify fentanyl from other drugs and quantify trace amounts of fentanyl. In this paper, gold nanoparticle (AuNP)-decorated single-walled carbon nanotube (SWCNT)-based field-effect transistors (FETs) are utilized for machine learning-assisted identification of fentanyl from codeine, hydrocodone, and morphine. The unique sensing performance of fentanyl led to use machine learning approaches for accurate identification of fentanyl. Employing linear discriminant analysis (LDA) with a leave-one-out cross-validation approach, a validation accuracy of 91.2% is achieved. Meanwhile, density functional theory (DFT) calculations reveal the factors that contributed to the enhanced sensitivity of the Au-SWCNT FET sensor toward fentanyl as well as the underlying sensing mechanism. Finally, fentanyl antibodies are introduced to the Au-SWCNT FET sensor as specific receptors, expanding the linear range of the sensor in the lower concentration range, and enabling ultrasensitive detection of fentanyl with a limit of detection at 10.8 fg mL-1.

Removing Conjugated Polymers from Aligned Carbon Nanotube Arrays.

Aligned carbon nanotube (A-CNT) with high semiconducting purity and high-density have been considered as one of the most promising active channels for field-effect transistors (FETs), but conjugated polymer dispersant residues on the surface of A-CNT have become the main obstacle for its further development in electronics applications. In this work, a series of removable conjugated polymers (CPs) are designed and synthesized to achieve favorable purification and alignment for CNT arrays with a high density of ≈360 CNTs/µm. Furthermore, a removal process of CPs on the CNT array film is developed. Raman spectra show that the CNTs in array film are almost not damaged after the removal process, and the G/D ratio is as high as 35. The field-effect transistors (FETs) are fabricated with a saturation current density up to 600 µA µm-1 and a current on-off ratio of ≈105, even with a relatively long channel length of ≈3 µm.

Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics.

Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.

Crystal Engineering Under Residual Solvent Evaporation: A Journey Into Crystallization Chronicles of Soluble Acenes.

In the pursuit of achieving high-performance and high-throughput organic transistors, this study highlights two critical aspects: designing new soluble acenes and optimizing their solution processing. A fundamental understanding of the crystallization mechanism inherent to these customized soluble acenes, as they undergo a transformation during the evaporation of residual solvent, is deemed essential. Here, the pathway to crafting ideal solution processing conditions is elucidated, meticulously tailored to the molecular structure of soluble acenes when blended with polymers. Employing a comprehensive array of analytical and computational methodologies, this investigation delves directly into the intricate interplay between processing parameters and crystallization mechanisms, firmly rooted in the domains of thermodynamics and kinetics. Notably, a delicate equilibrium where the optimal weight of residual solvent harmoniously aligns is uncovered with the specific attributes of soluble acene molecules, exerting influence over vertical phase separation with the blended polymer and the crystallization process of soluble acenes at the surface. Consequently, transistors showcasing remarkable field-effect mobility exceeding 8 cm2 V-1 s-1 are successfully developed. These findings provide invaluable guidance for navigating the path toward determining optimal solution processing conditions across a diverse array of soluble acene/polymer blend systems, all achieved through the strategic application of crystal and residual solvent engineering.

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing.

Aluminum Scandium Nitride (Al1-xScxN) has received attention for its exceptional ferroelectric properties, whereas the fundamental mechanism determining its dynamic response and reliability remains elusive. In this work, an unreported nucleation-based polarization switching mechanism in Al0.7Sc0.3N (AlScN) is unveiled, driven by its intrinsic ferroelectricity rooted in the ionic displacement. Fast polarization switching, characterized by a remarkably low characteristic time of 0.00183 ps, is captured, and effectively simulated using a nucleation-limited switching (NLS) model, where the profound effect of defects on the nucleation and domain propagation is systematically studied. These findings are further integrated into Monte Carlo simulations to unravel the influence of the activation energy for ferroelectric switching on the distributions of switching thresholds. The long-term reliability of devices is also confirmed by time-dependent dielectric breakdown (TDDB) measurements, and the effect of thickness scaling is discussed. Ferroelectric field-effect transistors (FeFETs) are demonstrated through the integration of AlScN and 2D MoS2 channel, where biological synaptic functions can be emulated with optimized operation voltage. The artificial neural network built from AlScN-based FeFETs achieves 93.8% recognition accuracy of handwritten digits, demonstrating the potential of ferroelectric AlScN in future neuromorphic computing applications.

Large-Scale Vertically Interconnected Complementary Field-Effect Transistors Based on Thermal Evaporation.

With the rapid development of integrated circuits, there is an increasing need to boost transistor density. In addition to shrinking the device size to the atomic scale, vertically stacked interlayer interconnection technology is also an effective solution. However, realizing large-scale vertically interconnected complementary field-effect transistors (CFETs) has never been easy. Currently-used semiconductor channel synthesis and doping technologies often suffer from complex fabrication processes, poor vertical integration, low device yield, and inability to large-scale production. Here, a method to prepare large-scale vertically interconnected CFETs based on a thermal evaporation process is reported. Thermally-evaporated etching-free Te and Bi2S3 serve as p-type and n-type semiconductor channels and exhibit FET on-off ratios of 103 and 105, respectively. The vertically interconnected CFET inverter exhibits a clear switching behavior with a voltage gain of 17 at a 4 V supply voltage and a device yield of 100%. Based on the ability of thermal evaporation to prepare large-scale uniform semiconductor channels on arbitrary surfaces, repeated upward manufacturing can realize multi-level interlayer interconnection integrated circuits.