Coexistence of Ferroelectricity and Ferromagnetism in Atomically Thin Two-Dimensional Cr2S3/WS2 Vertical Heterostructures.

Two-dimensional (2D) heterostructures with ferromagnetism and ferroelectricity provide a promising avenue to miniaturize the device size, increase computational power, and reduce energy consumption. However, the direct synthesis of such eye-catching heterostructures has yet to be realized up to now. Here, we design a two-step chemical vapor deposition strategy to growth of Cr2S3/WS2 vertical heterostructures with atomically sharp and clean interfaces on sapphire. The interlayer charge transfer and periodic moiré superlattice result in the emergence of room-temperature ferroelectricity in atomically thin Cr2S3/WS2 vertical heterostructures. In parallel, long-range ferromagnetic order is discovered in 2D Cr2S3 via the magneto-optical Kerr effect technique with the Curie temperature approaching 170 K. The charge distribution variation induced by the moiré superlattice changes the ferromagnetic coupling strength and enhances the Curie temperature. The coexistence of ferroelectricity and ferromagnetism in 2D Cr2S3/WS2 vertical heterostructures provides a cornerstone for the further design of logic-in-memory devices to build new computing architectures.

Building Asymmetric Zn-N3 Bridge between 2D Photocatalyst and Co-catalyst for Directed Charge Transfer toward Efficient H2O2 Synthesis.

Two-dimensional (2D) polymeric semiconductors are a class of promising photocatalysts; however, it remains challenging to facilitate their interlayer charge transfer for suppressed in-plane charge recombination and thus improved quantum efficiency. Although some strategies, such as π-π stacking and van der Waals interaction, have been developed so far, directed interlayer charge transfer still cannot be achieved. Herein, we report a strategy of forming asymmetric Zn-N3 units that can bridge nitrogen (N)-doped carbon layers with polymeric carbon nitride nanosheets (C3N4-Zn-N(C)) to address this challenge. The symmetry-breaking Zn-N3 moiety, which has an asymmetric local charge distribution, enables directed interfacial charge transfer between the C3N4 photocatalyst and the N-doped carbon co-catalyst. As evidenced by femtosecond transient absorption spectroscopy, charge separation can be significantly enhanced by the interfacial asymmetric Zn-N3 bonding bridges. As a result, the designed C3N4-Zn-N(C) catalyst exhibits dramatically enhanced H2O2 photosynthesis activity, outperforming most of the reported C3N4-based catalysts. This work highlights the importance of tailoring interfacial chemical bonding channels in polymeric photocatalysts at the molecular level to achieve effective spatial charge separation.

Charge Transfer Dynamics in MoSe2/hBN/WSe2 Heterostructures.

Ultrafast charge transfer processes provide a facile way to create interlayer excitons in directly contacted transition metal dichalcogenide (TMD) layers. More sophisticated heterostructures composed of TMD/hBN/TMD enable new ways to control interlayer exciton properties and achieve novel exciton phenomena, such as exciton insulators and condensates, where longer lifetimes are desired. In this work, we experimentally study the charge transfer dynamics in a heterostructure composed of a 1 nm thick hBN spacer between MoSe2 and WSe2 monolayers. We observe the hole transfer from MoSe2 to WSe2 through the hBN barrier with a time constant of 500 ps, which is over 3 orders of magnitude slower than that between TMD layers without a spacer. Furthermore, we observe strong competition between the interlayer charge transfer and intralayer exciton-exciton annihilation processes at high excitation densities. Our work opens possibilities to understand charge transfer pathways in TMD/hBN/TMD heterostructures for the efficient generation and control of interlayer excitons.

Dissecting Interlayer Hole and Electron Transfer in Transition Metal Dichalcogenide Heterostructures via Two-Dimensional Electronic Spectroscopy.

Monolayer transition metal dichalcogenides (ML-TMDs) are two-dimensional semiconductors that stack to form heterostructures (HSs) with tailored electronic and optical properties. TMD/TMD-HSs like WS2/MoS2 have type II band alignment and form long-lived (nanosecond) interlayer excitons following sub-100 fs interlayer charge transfer (ICT) from the photoexcited intralayer exciton. While many studies have demonstrated the ultrafast nature of ICT processes, we still lack a clear physical understanding of ICT due to the trade-off between temporal and frequency resolution in conventional transient absorption spectroscopy. Here, we perform two-dimensional electronic spectroscopy (2DES), a method with both high frequency and temporal resolution, on a large-area WS2/MoS2 HS where we unambiguously time resolve both interlayer hole and electron transfer with 34 ± 14 and 69 ± 9 fs time constants, respectively. We simultaneously resolve additional optoelectronic processes including band gap renormalization and intralayer exciton coupling. This study demonstrates the advantages of 2DES in comprehensively resolving ultrafast processes in TMD-HS, including ICT.

Equally efficient interlayer exciton relaxation and improved absorption in epitaxial and nonepitaxial MoS2/WS2 heterostructures.

Semiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS(2)/WS(2) heterostructures consisting of monolayer MoS(2) and WS(2) stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar 2 orders of magnitude decrease of photoluminescence intensity in both epitaxial and nonepitaxial MoS(2)/WS(2) heterostructures. Both heterostructures also show similarly improved absorption beyond the simple superimposition of the absorptions of monolayer MoS(2) and WS(2). Our result indicates that 2D heterostructures bear significant implications for the development of photonic devices, in particular those requesting efficient exciton separation and strong light absorption, such as solar cells, photodetectors, modulators, and photocatalysts. It also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy.

Toward Broadband Photodetection: Band Alignment and Interlayer Charge Transfer in 2D Transition Metal Dichalcogenides/3D-Ga2O3 Hybrid-Dimensional Heterostructures.

Recently, various transition metal dichalcogenides (TMDs)/Ga2O3 heterostructures have emerged as excellent candidates for the development of broadband photodetection, exhibiting various merits such as broadband optical absorption, efficient interlayer carrier transfer, a relatively simple fabrication process, and potential for flexibility. In this work, vertically stacked MoSe2/Ga2O3, WS2/Ga2O3, and WSe2/Ga2O3 heterostructures were experimentally synthesized, all exhibiting broadband light absorption, spanning at least from 200 to 800 nm. The absorption coefficients of these TMDs/Ga2O3 heterostructures are significantly improved compared to those of individual Ga2O3 films. The superior performance can be attributed to the type-I band alignment and efficient interlayer carrier transfer, which result from various band offsets along with the different doping conditions of the TMD layers, leading to distinct photoluminescence (PL) emission properties. Through a detailed analysis of the excitation-power-dependent PL spectra, we offer an in-depth discussion of the interlayer carrier transfer mechanism in the TMDs/Ga2O3 heterostructures. Regarding interlayer coupling effects, the shift of the EF of TMD layers plays a crucial role in modulating their trion emission properties. These findings suggest that these three TMDs/Ga2O3 heterostructures have great potential in broadband photodetection, and our in-depth physical mechanism analysis lays a solid foundation for a new device design.

Structural, Electronic, and Physical Properties of a New Layered Cr-Based Oxyarsenide Sr2Cr2AsO3.

We report synthesis, crystal structure, and physical properties of Sr2Cr2AsO3. The new compound crystallizes in a Sr2GaO3CuS-type structure with two distinct Cr sites, Cr(1) in the perovskite-like block layers of "Sr3Cr2O6" and Cr(2) in the ThCr2Si2-type layers of "SrCr2As2". An inter-block-layer charge transfer is explicitly evidenced, which dopes electrons in the CrO2 planes and simultaneously dopes holes into the CrAs layers. Measurements of electrical resistivity, magnetization, and specific heat, in combination with density-functional theoretical calculations, indicate that the title material is an antiferromagnetic metal. The Cr(2) magnetic moments in the CrAs layers order at 420 K, while the Cr(1) spins in the CrO2 planes show quasi-two-dimensional magnetism with long-range ordering below 80 K. Both Néel temperatures are significantly reduced, compared with those of the cousin material Sr2Cr3As2O2, probably due to the intrinsic charge-carrier doping. Complex re-entrant magnetic transitions with a huge magnetic hysteresis were observed at low temperatures.

Electrically Tunable Second Harmonic Generation in Atomically Thin ReS2.

Electrical tuning of second-order nonlinearity in optical materials is attractive to strengthen and expand the functionalities of nonlinear optical technologies, though its implementation remains elusive. Here, we report the electrically tunable second-order nonlinearity in atomically thin ReS2 flakes benefiting from their distorted 1T crystal structure and interlayer charge transfer. Enabled by the efficient electrostatic control of the few-atomic-layer ReS2, we show that second harmonic generation (SHG) can be induced in odd-number-layered ReS2 flakes which are centrosymmetric and thus without intrinsic SHG. Moreover, the SHG can be precisely modulated by the electric field, reversibly switching from almost zero to an amplitude more than 1 order of magnitude stronger than that of the monolayer MoS2. For the even-number-layered ReS2 flakes with the intrinsic SHG, the external electric field could be leveraged to enhance the SHG. We further perform the first-principles calculations which suggest that the modification of in-plane second-order hyperpolarizability by the redistributed interlayer-transferring charges in the distorted 1T crystal structure underlies the electrically tunable SHG in ReS2. With its active SHG tunability while using the facile electrostatic control, our work may further expand the nonlinear optoelectronic functions of two-dimensional materials for developing electrically controllable nonlinear optoelectronic devices.

Interlayer Coupling and Ultrafast Hot Electron Transfer Dynamics in Metallic VSe2/Graphene van der Waals Heterostructures.

Atomically thin vanadium diselenide (VSe2) is a two-dimensional transition metal dichalcogenide exhibiting attractive properties due to its metallic 1T phase. With the recent development of methods to manufacture high-quality monolayer VSe2 on van der Waals materials, the outstanding properties of VSe2-based heterostructures have been widely studied for diverse applications. Dimensional reduction and interlayer coupling with a van der Waals substrate lead to its distinguishable characteristics from its bulk counterparts. However, only a few fundamental studies have investigated the interlayer coupling effects and hot electron transfer dynamics in VSe2 heterostructures. In this work, we reveal ultrafast and efficient interlayer hot electron transfer and interlayer coupling effects in VSe2/graphene heterostructures. Femtosecond time-resolved reflectivity measurements showed that hot electrons in VSe2 were transferred to graphene within a 100 fs time scale with high efficiency. Besides, coherent acoustic phonon dynamics indicated interlayer coupling in VSe2/graphene heterostructures and efficient thermal energy transfer to three-dimensional substrates. Our results provide valuable insights into the intriguing properties of metallic transition metal dichalcogenide heterostructures and motivate designing optoelectronic and photonic devices with tailored properties.

Simultaneous Hosting of Positive and Negative Trions and the Enhanced Direct Band Emission in MoSe2/MoS2 Heterostacked Multilayers.

Heterostacking of layered transition-metal dichalcogenide (LTMD) monolayers (1Ls) offers a convenient way of designing two-dimensional exciton systems. Here we demonstrate the simultaneous hosting of positive trions and negative trions in heterobilayers made by vertically stacking 1L MoSe2 and 1L MoS2. The charge transfer occurring between the 1Ls of MoSe2 and MoS2 converted the polarity of trions in 1L MoSe2 from negative to positive, resulting in the presence of positive trions in the 1L MoSe2 and negative trions in the 1L MoS2 of the same heterostacked bilayer. Significantly enhanced MoSe2 photoluminescence (PL) in the heterostacked bilayers compared to the PL of 1L MoSe2 alone suggests that, unlike other previously reported heterostacked bilayers, direct band transition of 1L MoSe2 in heterobilayer was enhanced after the vertical heterostacking. Moreover, by inserting hexagonal BN monolayers between 1L MoSe2 and 1L MoS2, we were able to adjust the charge transfer to maximize the MoSe2 PL of the heteromultilayers and have achieved a 9-fold increase of the PL emission. The enhanced optical properties of our heterostacked LTMDs suggest the exciting possibility of designing LTMD structures that exploit the superior optical properties of 1L LTMDs.

Interlayer charge-transfer in impacting the second hyperpolarizabilities: radical and cation species of hexathiophenalenylium and its nitro dimers.

Hexathiophenalenylium (HTPLY) has gained increasing attention for its interesting and potentially useful optical properties as a result of the enhancement in spin delocalization and charge-transfer of phenalenyl radicals, occasioned by the attachment of successive three disulfide linkages. Herein, we performed density functional theory to calculate the binding interactions, electronic absorption spectra and the second hyperpolarizabilities of cation and radical dimers of HTPLY and its nitro derivatives. It is found that the equilibrium structures of the π dimers at fully staggered position are most stable. Among these π dimers, radical dimers exhibit stronger binding interactions with respect to cation dimers. In addition, obvious red shifts in electronic spectra of radical dimers are dependent on the large interlayer charge-transfers. More importantly, radical dimers [4]dim3 and [5]dim1 exhibit a significant increase in the second hyperpolarizabilities as compared to cation dimers, which is due to lower excitation energies and larger interlayer charge-transfers. We believe that the results presented in this article shall provide important evidence for the large interlayer charge-transfers in enhancing the NLO properties of the π dimers.