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Strong energy dependence of the electron-phonon coupling strength on Bi(100).
Gayone, J E; Hoffmann, S V; Li, Z; Hofmann, Ph.
Afiliação
  • Gayone JE; Institute for Storage Ring Facilities, University of Aarhus, DK-8000 Aarhus C, Denmark.
Phys Rev Lett ; 91(12): 127601, 2003 Sep 19.
Article em En | MEDLINE | ID: mdl-14525400
ABSTRACT
We have studied the energy dependence of the electron-phonon coupling strength on Bi(100). A fit of the temperature-dependent surface state linewidth results in a change of the coupling parameter lambda from 0.20+/-0.02 to 0.72+/-0.05 as the binding energy of the surface state increases from 70 to 330 meV. This result cannot be reconciled with the usual interpretation of lambda as the electron-phonon mass enhancement parameter at the Fermi energy. We suggest that this behavior is mainly caused by the strong energy dependence of the bulk density of states in this region.
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2003 Tipo de documento: Article País de afiliação: Dinamarca
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2003 Tipo de documento: Article País de afiliação: Dinamarca