Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides.
Opt Lett
; 31(11): 1714-6, 2006 Jun 01.
Article
em En
| MEDLINE
| ID: mdl-16688271
ABSTRACT
We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photogenerated free carriers.
Buscar no Google
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Lett
Ano de publicação:
2006
Tipo de documento:
Article
País de afiliação:
China