An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses.
Opt Express
; 17(16): 13609-14, 2009 Aug 03.
Article
em En
| MEDLINE
| ID: mdl-19654768
ABSTRACT
We have developed an InAs/InP quantum dot (QD) gain material using a double cap growth procedure and GaP sublayer to tune QDs into the L-band. By using it, a passive L-band mode-locked laser with pulse duration of 445 fs at the repetition rate of 46 GHz was demonstrated. The 3-dB linewidth of the RF spectrum is less than 100 KHz. The lasing threshold injection current is 24 mA with an external differential quantum efficiency of 22% and an average output power of 27 mW. The relationship between pulse duration and 3-dB spectral bandwidth as a function of injection current was investigated.
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Fosfinas
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Arsenicais
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Pontos Quânticos
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Índio
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Lasers
Tipo de estudo:
Evaluation_studies
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2009
Tipo de documento:
Article
País de afiliação:
Canadá