Observation of the intraexciton Autler-Townes effect in GaAs/AlGaAs semiconductor quantum wells.
Phys Rev Lett
; 105(16): 167401, 2010 Oct 15.
Article
em En
| MEDLINE
| ID: mdl-21231010
ABSTRACT
The near-infrared transmission of a semiconductor multiple quantum well is probed under intense terahertz illumination. We observe clear evidence of the intraexcitonic Autler-Townes effect when the terahertz beam is tuned near the 1s-2p transition of the heavy-hole exciton. The strongly coupled effective two-level system has been driven with terahertz field strengths of up to 10 kV/cm resulting in a Rabi energy of ≈0.6 times the transition energy. The induced near-infrared spectral changes at low intensities are qualitatively explained using a basic two-level model.
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MEDLINE
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En
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Phys Rev Lett
Ano de publicação:
2010
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Article
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Alemanha