Voltage-induced switching with magnetoresistance signature in magnetic nano-filaments.
J Phys Condens Matter
; 21(48): 485303, 2009 Dec 02.
Article
em En
| MEDLINE
| ID: mdl-21832513
ABSTRACT
Large hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal-insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
J Phys Condens Matter
Assunto da revista:
BIOFISICA
Ano de publicação:
2009
Tipo de documento:
Article
País de afiliação:
Estados Unidos