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Influence of parasitic capacitance on output voltage for series-connected thin-film piezoelectric devices.
Kanda, Kensuke; Saito, Takashi; Iga, Yuki; Higuchi, Kohei; Maenaka, Kazusuke.
Afiliação
  • Kanda K; Graduate School of Engineering, University of Hyogo, 2167 Shosha, Himeji 671-2280, Japan. kanda@eng.u-hyogo.ac.jp
Sensors (Basel) ; 12(12): 16673-84, 2012 Dec 04.
Article em En | MEDLINE | ID: mdl-23211754
ABSTRACT
Series-connected thin film piezoelectric elements can generate large output voltages. The output voltage ideally is proportional to the number of connections. However, parasitic capacitances formed by the insulation layers and derived from peripheral circuitry degrade the output voltage. Conventional circuit models are not suitable for predicting the influence of the parasitic capacitance. Therefore we proposed the simplest model of piezoelectric elements to perform simulation program with integrated circuit emphasis (SPICE) circuit simulations). The effects of the parasitic capacitances on the thin-film Pb(Zr, Ti)O(3), (PZT) elements connected in series on a SiO(2) insulator are demonstrated. The results reveal the negative effect on the output voltage caused by the parasitic capacitances of the insulation layers. The design guidelines for the devices using series-connected piezoelectric elements are explained.
Assuntos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Dióxido de Silício / Capacitância Elétrica / Desenho de Equipamento Tipo de estudo: Prognostic_studies Idioma: En Revista: Sensors (Basel) Ano de publicação: 2012 Tipo de documento: Article País de afiliação: Japão

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Assunto principal: Dióxido de Silício / Capacitância Elétrica / Desenho de Equipamento Tipo de estudo: Prognostic_studies Idioma: En Revista: Sensors (Basel) Ano de publicação: 2012 Tipo de documento: Article País de afiliação: Japão