Diameter-Dependent photocurrent in InAsSb nanowire infrared photodetectors.
Nano Lett
; 13(4): 1380-5, 2013 Apr 10.
Article
em En
| MEDLINE
| ID: mdl-23464650
ABSTRACT
Photoconductors using vertical arrays of InAs/InAs(1-x)Sb(x) nanowires with varying Sb composition x have been fabricated and characterized. The spectrally resolved photocurrents are strongly diameter dependent with peaks, which are red-shifted with diameter, appearing for thicker wires. Results from numerical simulations are in good agreement with the experimental data and reveal that the peaks are due to resonant modes that enhance the coupling of light into the wires. Through proper selection of wire diameter, the absorptance can be increased by more than 1 order of magnitude at a specific wavelength compared to a thin planar film with the same amount of material. A maximum 20% cutoff wavelength of 5.7 µm is obtained at 5 K for a wire diameter of 717 nm at a Sb content of x = 0.62, but simulations predict that detection at longer wavelengths can be achieved by increasing the diameter. Furthermore, photodetection in InAsSb nanowire arrays integrated on Si substrates is also demonstrated.
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01-internacional
Base de dados:
MEDLINE
Assunto principal:
Fotoquímica
/
Arsenicais
/
Nanofios
/
Índio
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2013
Tipo de documento:
Article
País de afiliação:
Suécia