Polarity-driven nonuniform composition in InGaAs nanowires.
Nano Lett
; 13(11): 5085-9, 2013 Nov 13.
Article
em En
| MEDLINE
| ID: mdl-24134612
ABSTRACT
Manipulating the composition and morphology of semiconductor nanowires in a precisely controlled fashion is critical in developing nanowire devices. This is particularly true for ternary III-V nanowires. Many studies have shown the complexities within those nanowires. Here we report our findings of compositional irregularity in the shells of core-shell InGaAs nanowires with zinc-blende structure. Such an effect is caused by the crystal polarity within III-V zinc-blende lattice and the one-dimensional nature of nanowires that allows the formation of opposite polar surfaces simultaneously on the nanowire sidewalls. This polarity-driven effect in III-V nanowires may be utilized in manipulating the composition and morphology of III-V nanowires for device applications.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2013
Tipo de documento:
Article
País de afiliação:
Austrália