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Efficient inverted quantum-dot light-emitting devices with TiO2/ZnO bilayer as the electron contact layer.
Opt Lett ; 39(3): 426-9, 2014 Feb 01.
Article em En | MEDLINE | ID: mdl-24487831
ABSTRACT
We have demonstrated an efficient inverted CdSe/CdS/ZnS core/shell quantum-dot light-emitting device (QD-LED) using a solution-processed sol-gel TiO2 and ZnO nanoparticle composite layer as an electron-injection layer with controllable morphology and investigated the electroluminescence mechanism. The introduction of the ZnO layer can lead to the formation of spin-coated uniform QD films and fabrication of high-luminance QD-LEDs. The TiO2 layer improves the balance of charge injection due to its lower electron mobility relative to the ZnO layer. These results offer a practicable platform for the realization of a trade-off between the luminance and efficiency in the inverted QD-LEDs with TiO2/ZnO composites as the electron contact layer.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Opt Lett Ano de publicação: 2014 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Opt Lett Ano de publicação: 2014 Tipo de documento: Article