A new bipolar RRAM selector based on anti-parallel connected diodes for crossbar applications.
Nanotechnology
; 25(18): 185201, 2014 May 09.
Article
em En
| MEDLINE
| ID: mdl-24737150
ABSTRACT
Crossbar arrays are the most promising application of a resistive random access memory (RRAM) device for achieving high density memory. However, cross-talk interference in the crossbar array limits the increase in the integration density. In this paper, the combination of two anti-parallel connected diodes and a bipolar RRAM cell is proposed to suppress the sneak current in a crossbar array with anti-parallel connected diodes as the selector for the bipolar RRAM. By using the anti-parallel connected diodes as a selector, the sneak current can be effectively suppressed and the high density crossbar array of more than 1 Mb can be realized as estimated by the 1/2V read voltage scheme. These results indicate that anti-parallel connected diodes can be used as a bipolar selector and have great potential for high density bipolar RRAM crossbar array applications.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Dispositivos de Armazenamento em Computador
/
Eletrônica
Limite:
Humans
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2014
Tipo de documento:
Article