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Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate.
Lee, Chia-Yu; Tzou, An-Jye; Lin, Bing-Cheng; Lan, Yu-Pin; Chiu, Ching-Hsueh; Chi, Gou-Chung; Chen, Chi-Hsiang; Kuo, Hao-Chung; Lin, Ray-Ming; Chang, Chun-Yen.
Afiliação
  • Lee CY; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
  • Tzou AJ; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan ; Department of Electrophysics, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
  • Lin BC; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
  • Lan YP; Microelectronic and Information System Research Center, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
  • Chiu CH; Advanced Optoelectronic Technology Incorporation, Hsinchu County 303, Taiwan.
  • Chi GC; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
  • Chen CH; Optorun Co., Ltd., Saitama-ken 350-0801, Japan.
  • Kuo HC; Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
  • Lin RM; Department of Electronic Engineering, Chang-Gung University, Taoyuan 333, Taiwan.
  • Chang CY; Department of Electrophysics, National Chiao Tung University, Hsin-Chu 30010, Taiwan ; Microelectronic and Information System Research Center, National Chiao Tung University, Hsin-Chu 30010, Taiwan.
Nanoscale Res Lett ; 9(1): 505, 2014.
Article em En | MEDLINE | ID: mdl-25258616
The flip chip ultraviolet light-emitting diodes (FC UV-LEDs) with a wavelength of 365 nm are developed with the ex situ reactive plasma deposited (RPD) AlN nucleation layer on patterned sapphire substrate (PSS) by an atmospheric pressure metal-organic chemical vapor deposition (AP MOCVD). The ex situ RPD AlN nucleation layer can significantly reduce dislocation density and thus improve the crystal quality of the GaN epitaxial layers. Utilizing high-resolution X-ray diffraction, the full width at half maximum of the rocking curve shows that the crystalline quality of the epitaxial layer with the (RPD) AlN nucleation layer is better than that with the low-temperature GaN (LT-GaN) nucleation layer. The threading dislocation density (TDD) is estimated by transmission electron microscopy (TEM), which shows the reduction from 6.8 × 10(7) cm(-2) to 2.6 × 10(7) cm(-2). Furthermore, the light output power (LOP) of the LEDs with the RPD AlN nucleation layer has been improved up to 30 % at a forward current of 350 mA compared to that of the LEDs grown on PSS with conventional LT-GaN nucleation layer.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Taiwan

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanoscale Res Lett Ano de publicação: 2014 Tipo de documento: Article País de afiliação: Taiwan