A facile and universal top-down method for preparation of monodisperse transition-metal dichalcogenide nanodots.
Angew Chem Int Ed Engl
; 54(18): 5425-8, 2015 Apr 27.
Article
em En
| MEDLINE
| ID: mdl-25760801
ABSTRACT
Despite unique properties of layered transition-metal dichalcogenide (TMD) nanosheets, there is still lack of a facile and general strategy for the preparation of TMD nanodots (NDs). Reported herein is the preparation of a series of TMD NDs, including TMD quantum dots (e.g. MoS2 , WS2 , ReS2 , TaS2 , MoSe2 and WSe2 ) and NbSe2 NDs, from their bulk crystals by using a combination of grinding and sonication techniques. These NDs could be easily separated from the N-methyl-2-pyrrolidone when post-treated with n-hexane and then chloroform. All the TMD NDs with sizes of less than 10â
nm show a narrow size distribution with high dispersity in solution. As a proof-of-concept application, memory devices using TMD NDs, for example, MoSe2 , WS2 , or NbSe2 , mixed with polyvinylpyrrolidone as active layers, have been fabricated, which exhibit a nonvolatile write-once-read-many behavior. These high-quality TMD NDs should have various applications in optoelectronics, solar cells, catalysis, and biomedicine.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Angew Chem Int Ed Engl
Ano de publicação:
2015
Tipo de documento:
Article