Single Layer Molybdenum Disulfide under Direct Out-of-Plane Compression: Low-Stress Band-Gap Engineering.

Peña-Álvarez, Miriam; del Corro, Elena; Morales-García, Ángel; Kavan, Ladislav; Kalbac, Martin; Frank, Otakar

Peña-Álvarez, Miriam; del Corro, Elena; Morales-García, Ángel; Kavan, Ladislav; Kalbac, Martin; Frank, Otakar.

Afiliação

Peña-Álvarez M; J. Heyrovsky Institute of Physical Chemistry of the AS CR, v.v.i., Dolejskova 2155/3, 182 23 Prague 8, Czech Republic.
del Corro E; Departamento de Química Física I, Facultad de Ciencias Químicas, Universidad Complutense de Madrid, Madrid 28040, Spain.
Morales-García Á; J. Heyrovsky Institute of Physical Chemistry of the AS CR, v.v.i., Dolejskova 2155/3, 182 23 Prague 8, Czech Republic.
Kavan L; §Department of Physical and Macromolecular Chemistry, Faculty of Science, Charles University in Prague, Hlavova 2030, Prague 2, 128 43, Czech Republic.
Kalbac M; J. Heyrovsky Institute of Physical Chemistry of the AS CR, v.v.i., Dolejskova 2155/3, 182 23 Prague 8, Czech Republic.
Frank O; J. Heyrovsky Institute of Physical Chemistry of the AS CR, v.v.i., Dolejskova 2155/3, 182 23 Prague 8, Czech Republic.

Nano Lett ; 15(5): 3139-46, 2015 May 13.

Article em En | MEDLINE | ID: mdl-25915008

Palavras-chave

Molybdenum disulfide; Raman spectroscopy; anvil cell; band gap engineering; electronic properties calculations; out-of-plane compression

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2015 Tipo de documento: Article País de afiliação: República Tcheca

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