Strain and Hole Gas Induced Raman Shifts in Ge-Si(x)Ge(1-x) Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy.
Nano Lett
; 15(7): 4303-10, 2015 Jul 08.
Article
em En
| MEDLINE
| ID: mdl-26053999
ABSTRACT
We report tip-enhanced and conventional Raman spectroscopy studies of Ge-Si0.5Ge0.5 core-shell nanowires in which we observe two distinct Ge-Ge vibrational mode Raman peaks associated with vibrations in the Ge nanowire core and at the Ge-Si0.5Ge0.5 interface at which a quantum-confined hole gas is formed. Tip enhanced Raman measurements show dramatically increased sensitivity to the modes at the Ge-Si0.5Ge0.5 interface and a shift in position of this mode due to plasmonic field localization at the tip apex and the resulting change in phonon self-energy caused by increased coupling between phonons and intervalence-band carrier transitions.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nano Lett
Ano de publicação:
2015
Tipo de documento:
Article
País de afiliação:
Estados Unidos