Quantitative evaluation of microtwins and antiphase defects in GaP/Si nanolayers for a III-V photonics platform on silicon using a laboratory X-ray diffraction setup.

Ping Wang, Yan; Letoublon, Antoine; Nguyen Thanh, Tra; Bahri, Mounib; Largeau, Ludovic; Patriarche, Gilles; Cornet, Charles; Bertru, Nicolas; Le Corre, Alain; Durand, Olivier

Ping Wang, Yan; Letoublon, Antoine; Nguyen Thanh, Tra; Bahri, Mounib; Largeau, Ludovic; Patriarche, Gilles; Cornet, Charles; Bertru, Nicolas; Le Corre, Alain; Durand, Olivier.

Afiliação

Ping Wang Y; UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
Letoublon A; UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
Nguyen Thanh T; Universite Grenoble Alpes, Institu NEEL, Grenoble, F-38000, France ; CNRS, Institut NEEL, Grenoble, F-38042, France.
Bahri M; Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis, 91460, France.
Largeau L; Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis, 91460, France.
Patriarche G; Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis, 91460, France.
Cornet C; UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
Bertru N; UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
Le Corre A; UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.
Durand O; UMR FOTON, CNRS, INSA Rennes, Rennes, F35708, France.

J Appl Crystallogr ; 48(Pt 3): 702-710, 2015 Jun 01.

Article em En | MEDLINE | ID: mdl-26089763

Palavras-chave

GaP/Si nanolayers; antiphase defects; laboratory X-ray diffraction; microtwins; semiconductors

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Appl Crystallogr Ano de publicação: 2015 Tipo de documento: Article País de afiliação: França

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