Single-longitudinal-mode Er:GGG microchip laser operating at 2.7 µm.

We reported on a diode-end-pumped single-longitudinal-mode microchip laser using a 600-µm-thick Er:GGG crystal at ∼2.7 µm, generating a maximum output power of 50.8 mW and the maximum pulsed energy of 0.306 mJ, with repetition rates of pumping light of 300, 200, and 100 Hz, respectively. The maximum slope efficiency of the laser was 20.1%. The laser was operated in a single-longitudinal mode centered at about 2704 nm with a FWHM of 0.42 nm. The laser had a fundamental beam profile and the beam quality parameter M(2) was measured as 1.46. These results indicate that the Er:GGG microchip laser is a potential compact mid-infrared laser source.