Distinguishing cubic and hexagonal phases within InGaN/GaN microstructures using electron energy loss spectroscopy.

Griffiths, I J; Cherns, D; Albert, S; Bengoechea-Encabo, A; Angel Sanchez, M; Calleja, E; Schimpke, T; Strassburg, M

Griffiths, I J; Cherns, D; Albert, S; Bengoechea-Encabo, A; Angel Sanchez, M; Calleja, E; Schimpke, T; Strassburg, M.

Afiliação

Griffiths IJ; School of Physics, H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, United Kingdom.
Cherns D; School of Physics, H. H. Wills Physics Laboratory, University of Bristol, Bristol, BS8 1TL, United Kingdom.
Albert S; ETSIT-ISOM, Universidad Politécnica de Madrid, 28040 Madrid, Spain.
Bengoechea-Encabo A; ETSIT-ISOM, Universidad Politécnica de Madrid, 28040 Madrid, Spain.
Angel Sanchez M; ETSIT-ISOM, Universidad Politécnica de Madrid, 28040 Madrid, Spain.
Calleja E; ETSIT-ISOM, Universidad Politécnica de Madrid, 28040 Madrid, Spain.
Schimpke T; Osram Opto Semiconductors GmbH, Leibnizstrasse 4, 93055, Regensburg, Germany.
Strassburg M; Osram Opto Semiconductors GmbH, Leibnizstrasse 4, 93055, Regensburg, Germany.

J Microsc ; 262(2): 167-70, 2016 May.

Article em En | MEDLINE | ID: mdl-26366483

Palavras-chave

EELS; InGaN micro-structures; STEM; light emitting diodes

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Microsc Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Reino Unido

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