Defect passivation induced strong photoluminescence enhancement of rhombic monolayer MoS2.

Su, Weitao; Jin, Long; Qu, Xiaodan; Huo, Dexuan; Yang, Li

Su, Weitao; Jin, Long; Qu, Xiaodan; Huo, Dexuan; Yang, Li.

Afiliação

Su W; Institute of Materials Physics, Hangzhou Dianzi University, 310018, Hangzhou, China. suweitao@hdu.edu.cn dxhuo@hdu.edu.cn.
Jin L; Institute of Materials Physics, Hangzhou Dianzi University, 310018, Hangzhou, China. suweitao@hdu.edu.cn dxhuo@hdu.edu.cn.
Qu X; Institute of Materials Physics, Hangzhou Dianzi University, 310018, Hangzhou, China. suweitao@hdu.edu.cn dxhuo@hdu.edu.cn.
Huo D; Institute of Materials Physics, Hangzhou Dianzi University, 310018, Hangzhou, China. suweitao@hdu.edu.cn dxhuo@hdu.edu.cn.
Yang L; Department of Chemistry, Xi'an Jiaotong-Liverpool University, 215123, Suzhou, China.

Phys Chem Chem Phys ; 18(20): 14001-6, 2016 05 18.

Article em En | MEDLINE | ID: mdl-27152375

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Chem Chem Phys Assunto da revista: BIOFISICA / QUIMICA Ano de publicação: 2016 Tipo de documento: Article

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