Double-layer-gate architecture for few-hole GaAs quantum dots.

ABSTRACT

We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode [Formula see text]/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.