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High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2.
Mleczko, Michal J; Xu, Runjie Lily; Okabe, Kye; Kuo, Hsueh-Hui; Fisher, Ian R; Wong, H-S Philip; Nishi, Yoshio; Pop, Eric.
Afiliação
  • Mleczko MJ; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
  • Xu RL; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
  • Okabe K; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
  • Kuo HH; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
  • Fisher IR; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
  • Wong HS; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
  • Nishi Y; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
  • Pop E; Department of Electrical Engineering, ‡Department of Materials Science and Engineering, §Department of Applied Physics, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
ACS Nano ; 10(8): 7507-14, 2016 08 23.
Article em En | MEDLINE | ID: mdl-27434729
Two-dimensional (2D) semimetals beyond graphene have been relatively unexplored in the atomically thin limit. Here, we introduce a facile growth mechanism for semimetallic WTe2 crystals and then fabricate few-layer test structures while carefully avoiding degradation from exposure to air. Low-field electrical measurements of 80 nm to 2 µm long devices allow us to separate intrinsic and contact resistance, revealing metallic response in the thinnest encapsulated and stable WTe2 devices studied to date (3-20 layers thick). High-field electrical measurements and electrothermal modeling demonstrate that ultrathin WTe2 can carry remarkably high current density (approaching 50 MA/cm(2), higher than most common interconnect metals) despite a very low thermal conductivity (of the order ∼3 Wm(-1) K(-1)). These results suggest several pathways for air-stable technological viability of this layered semimetal.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2016 Tipo de documento: Article País de afiliação: Estados Unidos