Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics.

Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A

Nugraha, Mohamad I; Häusermann, Roger; Watanabe, Shun; Matsui, Hiroyuki; Sytnyk, Mykhailo; Heiss, Wolfgang; Takeya, Jun; Loi, Maria A.

Afiliação

Nugraha MI; Zernike Institute for Advanced Materials, University of Groningen , Nijenborgh 4, Groningen 9747AG, The Netherlands.
Häusermann R; Department of Advanced Materials Science, School of Frontier Sciences, University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
Watanabe S; Department of Advanced Materials Science, School of Frontier Sciences, University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
Matsui H; Department of Advanced Materials Science, School of Frontier Sciences, University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, Japan.
Sytnyk M; JST, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan.
Heiss W; Research Center for Organic Electronics, Yamagata University , 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan.
Takeya J; Materials for Electronics and Energy Technology, Friedrich-Alexander-Universität Erlangen-Nürnberg , Martensstraße 7, 91058 Erlangen, Germany.
Loi MA; Energie Campus Nürnberg , Fürther Straße 250, 90429 Nürnberg, Germany.

ACS Appl Mater Interfaces ; 9(5): 4719-4724, 2017 Feb 08.

Article em En | MEDLINE | ID: mdl-28084725

Palavras-chave

PbS quantum dots; field-effect transistors; high-k; polaron; trap states

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Holanda

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