33 W continuous output power semiconductor disk laser emitting at 1275 nm.
Opt Express
; 25(6): 7008-7013, 2017 Mar 20.
Article
em En
| MEDLINE
| ID: mdl-28381042
ABSTRACT
We demonstrate a semiconductor disk laser emitting at 1275nm, employing a wafer fused AlInGaAs/InP-AlAs/GaAs gain mirror. A built-in Au-reflector was used to reflect the pump light not absorbed in a single pass through the gain chip active region. The laser exhibited an output power of 33 W for a pump spot with a diameter of 0.86 mm, an output coupler of 2.5%, and a heat-sink temperature of -5°C. When the temperature of the heat-sink was increased to 15 °C, the maximum output power reached a value of ~24 W. The study reveals that the wafer fused gain mirrors have a high optical quality and good uniformity enabling scaling of the maximum emitted power with the diameter of the pump spot, i.e. at least up to the 1 mm diameter.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2017
Tipo de documento:
Article