Metal-dielectric transition in Sn-intercalated graphene on SiC(0001).
Ultramicroscopy
; 183: 49-54, 2017 Dec.
Article
em En
| MEDLINE
| ID: mdl-28527595
ABSTRACT
The Sn intercalation into a buffer layer graphene grown on 4H-SiC(0001) substrate has been studied with spectroscopic photoemission and low energy electron microscope. Both SnSix and SnOx interfacial layers are found to form below the buffer layer, converting it into a quasi-free-standing monolayer graphene. Combining the various operation modes of the microscope allows a detailed insight into the formation processes of the interlayers and their thermal stability. In particular, at the interface we observed a reversible transition from silicide to oxide after exposure to ambient pressure and subsequent annealing. This metal-dielectric transition might be useful for interface engineering in graphene-based devices.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Ultramicroscopy
Ano de publicação:
2017
Tipo de documento:
Article