Mechanisms for Strong Anisotropy of In-Plane g-Factors in Hole Based Quantum Point Contacts.

Miserev, D S; Srinivasan, A; Tkachenko, O A; Tkachenko, V A; Farrer, I; Ritchie, D A; Hamilton, A R; Sushkov, O P

Miserev, D S; Srinivasan, A; Tkachenko, O A; Tkachenko, V A; Farrer, I; Ritchie, D A; Hamilton, A R; Sushkov, O P.

Afiliação

Miserev DS; School of Physics, University of New South Wales, Sydney 2033, Australia.
Srinivasan A; School of Physics, University of New South Wales, Sydney 2033, Australia.
Tkachenko OA; Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk 630090, Russia.
Tkachenko VA; Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk 630090, Russia.
Farrer I; Novosibirsk State University, Novosibirsk 630090, Russia.
Ritchie DA; Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S10 2TN, United Kingdom.
Hamilton AR; Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, United Kingdom.
Sushkov OP; School of Physics, University of New South Wales, Sydney 2033, Australia.

Phys Rev Lett ; 119(11): 116803, 2017 Sep 15.

Article em En | MEDLINE | ID: mdl-28949235

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Phys Rev Lett Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Austrália

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