Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys.

Amani, Matin; Regan, Emma; Bullock, James; Ahn, Geun Ho; Javey, Ali

Amani, Matin; Regan, Emma; Bullock, James; Ahn, Geun Ho; Javey, Ali.

Afiliação

Amani M; Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.
Regan E; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Bullock J; Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.
Ahn GH; Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Javey A; Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.

ACS Nano ; 11(11): 11724-11731, 2017 11 28.

Article em En | MEDLINE | ID: mdl-29087684

Palavras-chave

2D materials; b-P; b-PAs; mid-wave infrared; photodetector; specific detectivity

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2017 Tipo de documento: Article País de afiliação: Estados Unidos

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