Type-I Transition Metal Dichalcogenides Lateral Homojunctions: Layer Thickness and External Electric Field Effects.

Xia, Congxin; Xiong, Wenqi; Du, Juan; Wang, Tianxing; Peng, Yuting; Wei, Zhongming; Li, Jingbo; Jia, Yu

Xia, Congxin; Xiong, Wenqi; Du, Juan; Wang, Tianxing; Peng, Yuting; Wei, Zhongming; Li, Jingbo; Jia, Yu.

Afiliação

Xia C; College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.
Xiong W; College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.
Du J; College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.
Wang T; College of Physics and Materials Science, Henan Normal University, Xinxiang, 453007, China.
Peng Y; Department of Physics, University of Texas at Arlington, TX, 76019, USA.
Wei Z; Institutes of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Li J; Institutes of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
Jia Y; Key Laboratory for Special Functional Materials of Ministry of Education, Henan University, Kaifeng, 475004, China.

Small ; 14(21): e1800365, 2018 May.

Article em En | MEDLINE | ID: mdl-29683270

Palavras-chave

external electric fields; luminescence devices; transition metal dichalcogenides; type-I homojunction

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2018 Tipo de documento: Article País de afiliação: China

Texto completo

Imprimir

XML

PubMed Links

Buscar no Google