Thermoelectric Properties of Hot-Pressed Bi-Doped n-Type Polycrystalline SnSe.
Nanoscale Res Lett
; 13(1): 200, 2018 Jul 06.
Article
em En
| MEDLINE
| ID: mdl-29980879
ABSTRACT
á
We report on the successful preparation of Bi-doped n-type polycrystalline SnSe by hot-press method. We observed anisotropic transport properties due to the (h00) preferred orientation of grains along the pressing direction. The electrical conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 12.85 and 6.46 S cm-1 at 773 K for SnSeBi 8% sample, respectively, while thermal conductivity perpendicular to the pressing direction is higher than that parallel to the pressing direction, 0.81 and 0.60 W m-1 K-1 at 773 K for SnSeBi 8% sample, respectively. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition, whose transition temperature increases with Bi concentration. Our work addressed a possibility to dope polycrystalline SnSe by a hot-pressing process, which may be applied to module applications. HIGHLIGHTS 1. We have successfully achieved Bi-doped n-type polycrystalline SnSe by the hot-press method. 2. We observed anisotropic transport properties due to the [h00] preferred orientation of grains along pressing direction. 3. We observed a bipolar conducting mechanism in our samples leading to n- to p-type transition.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanoscale Res Lett
Ano de publicação:
2018
Tipo de documento:
Article