Three-Dimensional Graphene Field-Effect Transistors as High-Performance Photodetectors.

Deng, Tao; Zhang, Zhaohao; Liu, Yaxuan; Wang, Yingxin; Su, Fang; Li, Shasha; Zhang, Yang; Li, Hao; Chen, Houjin; Zhao, Ziran; Li, Yue; Liu, Zewen

Deng, Tao; Zhang, Zhaohao; Liu, Yaxuan; Wang, Yingxin; Su, Fang; Li, Shasha; Zhang, Yang; Li, Hao; Chen, Houjin; Zhao, Ziran; Li, Yue; Liu, Zewen.

Afiliação

Deng T; School of Electronic and Information Engineering , Beijing Jiaotong University , Beijing 100044 , China.
Zhang Z; Key Laboratory of Microelectronics Devices & Integrated Technology , IC Advanced Process R&D Center, Institute of Microelectronics of Chinese Academy of Sciences (IMECAS) , Beijing 100029 , China.
Liu Y; School of Electronic and Information Engineering , Beijing Jiaotong University , Beijing 100044 , China.
Su F; School of Electronic and Information Engineering , Beijing Jiaotong University , Beijing 100044 , China.
Li S; School of Electronic and Information Engineering , Beijing Jiaotong University , Beijing 100044 , China.
Zhang Y; School of Electronic and Information Engineering , Beijing Jiaotong University , Beijing 100044 , China.
Chen H; School of Electronic and Information Engineering , Beijing Jiaotong University , Beijing 100044 , China.

Nano Lett ; 19(3): 1494-1503, 2019 03 13.

Article em En | MEDLINE | ID: mdl-30698978

Palavras-chave

3D; FET; THz; graphene; photodetector

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China

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