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Coherent Resonant Tunneling through Double Metallic Quantum Well States.
Tao, Bingshan; Wan, Caihua; Tang, Ping; Feng, Jiafeng; Wei, Hongxiang; Wang, Xiao; Andrieu, Stéphane; Yang, Hongxin; Chshiev, Mairbek; Devaux, Xavier; Hauet, Thomas; Montaigne, François; Mangin, Stéphane; Hehn, Michel; Lacour, Daniel; Han, Xiufeng; Lu, Yuan.
Afiliação
  • Tao B; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China.
  • Wan C; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
  • Tang P; Institute of Electrical Engineering , Chinese Academy of Sciences , Beijing 100190 , China.
  • Feng J; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China.
  • Wei H; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China.
  • Wang X; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China.
  • Andrieu S; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China.
  • Yang H; Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences , Chinese Academy of Sciences , Beijing 100190 , China.
  • Chshiev M; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
  • Devaux X; Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering , Chinese Academy of Sciences , Ningbo 315201 , China.
  • Hauet T; Univ. Grenoble Alpes, CEA, CNRS, Grenoble INP, INAC-Spintec , 38000 Grenoble , France.
  • Montaigne F; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
  • Mangin S; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
  • Hehn M; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
  • Lacour D; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
  • Han X; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
  • Lu Y; Université de Lorraine, CNRS, Institut Jean Lamour , UMR 7198, campus ARTEM, 2 Allée André Guinier , 54011 Nancy , France.
Nano Lett ; 19(5): 3019-3026, 2019 05 08.
Article em En | MEDLINE | ID: mdl-30933564
ABSTRACT
Study of resonant tunneling through multimetallic quantum well (QW) structure is not only important for the fundamental understanding of quantum transport but also for the great potential to generate advanced functionalities of spintronic devices. However, it remains challenging to engineer such a structure due to the short electron phase coherence length in metallic QW system. Here, we demonstrate the successful fabrication of double-QW structure in a single fully epitaxial magnetic tunnel junction (MTJ) heterostructure, where two Fe QW layers are sandwiched between three MgAlO x tunnel barriers. We show clear evidence of the coherent resonant tunneling through the discrete QW states in the two QWs. The coherent resonant tunneling condition is fulfilled only when the middle barrier between the two QWs is thin enough and available QW states are present simultaneously in both QWs under a certain bias. Compared to the single QW structure, the resonant tunneling in double-QW MTJ produces strong conductivity oscillations with much narrower peak width (about half) owing to the enhanced energy filtering effect. This study presents a comprehensive understanding of the resonant tunneling mechanism in MTJ with multiple QWs, which is essential for future development of new spintronic devices operating in the quantum tunneling regime.
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2019 Tipo de documento: Article País de afiliação: China