Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN.

Jung, Jun Hyeok; Cho, Min Su; Jang, Won Douk; Lee, Sang Ho; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man

Jung, Jun Hyeok; Cho, Min Su; Jang, Won Douk; Lee, Sang Ho; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man.

Afiliação

Jung JH; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Cho MS; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Jang WD; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Lee SH; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Jang J; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Bae JH; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea.
Kang IM; School of Electronics Engineering, Kyungpook National University, Daegu, 41566, South Korea.

J Nanosci Nanotechnol ; 20(8): 4678-4683, 2020 Aug 01.

Article em En | MEDLINE | ID: mdl-32126640

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Coréia do Sul

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