Tungsten Diselenide Top-gate Transistors with Multilayer Antimonene Electrodes: Gate Stacks and Epitaxially Grown 2D Material Heterostructures.

Zhang, Yu-Wei; Li, Jun-Yan; Wu, Chao-Hsin; Chang, Chiao-Yun; Chang, Shu-Wei; Shih, Min-Hsiung; Lin, Shih-Yen

Zhang, Yu-Wei; Li, Jun-Yan; Wu, Chao-Hsin; Chang, Chiao-Yun; Chang, Shu-Wei; Shih, Min-Hsiung; Lin, Shih-Yen.

Afiliação

Zhang YW; Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
Li JY; Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd., Taipei, 11529, Taiwan.
Wu CH; Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd., Taipei, 11529, Taiwan.
Chang CY; Graduate Institute of Electronics Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
Chang SW; Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd., Taipei, 11529, Taiwan.
Shih MH; Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd., Taipei, 11529, Taiwan.
Lin SY; Research Center for Applied Sciences, Academia Sinica, No. 128, Sec. 2, Academia Rd., Taipei, 11529, Taiwan.

Sci Rep ; 10(1): 5967, 2020 Apr 06.

Article em En | MEDLINE | ID: mdl-32249852

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Rep Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Taiwan

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