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Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits.
Hsieh, Tung-Ying; Hsieh, Ping-Yi; Yang, Chih-Chao; Shen, Chang-Hong; Shieh, Jia-Min; Yeh, Wen-Kuan; Wu, Meng-Chyi.
Afiliação
  • Hsieh TY; Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan.
  • Hsieh PY; National Applied Research Laboratories, 3F, No. 106, Ho Ping E. Rd., Sec. 2, Taipei City 10622, Taiwan.
  • Yang CC; Taiwan Semiconductor Research Institute, No.26, Prosperity Road 1, Hsinchu 30013, Taiwan.
  • Shen CH; Taiwan Semiconductor Research Institute, No.26, Prosperity Road 1, Hsinchu 30013, Taiwan.
  • Shieh JM; Taiwan Semiconductor Research Institute, No.26, Prosperity Road 1, Hsinchu 30013, Taiwan.
  • Yeh WK; Taiwan Semiconductor Research Institute, No.26, Prosperity Road 1, Hsinchu 30013, Taiwan.
  • Wu MC; Taiwan Semiconductor Research Institute, No.26, Prosperity Road 1, Hsinchu 30013, Taiwan.
Micromachines (Basel) ; 11(8)2020 Jul 30.
Article em En | MEDLINE | ID: mdl-32751538
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Health_economic_evaluation Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Taiwan
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Health_economic_evaluation Idioma: En Revista: Micromachines (Basel) Ano de publicação: 2020 Tipo de documento: Article País de afiliação: Taiwan