Growth Mechanism of Alternating Defect Domains in Hexagonal WS<sub>2</sub> via Inhomogeneous W-Precursor Accumulation.

An, Gwang Hwi; Yun, Seok Joon; Lee, Young Hee; Lee, Hyun Seok

Growth Mechanism of Alternating Defect Domains in Hexagonal WS₂ via Inhomogeneous W-Precursor Accumulation.

An, Gwang Hwi; Yun, Seok Joon; Lee, Young Hee; Lee, Hyun Seok.

Afiliação

An GH; Department of Physics, Research Institute for Nanoscale Science and Technology, Chungbuk National University, Cheongju, 28644, Republic of Korea.
Yun SJ; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.
Lee YH; Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, 16419, Republic of Korea.
Lee HS; Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, Republic of Korea.

Small ; 16(43): e2003326, 2020 Oct.

Article em En | MEDLINE | ID: mdl-32996278

Palavras-chave

chemical vapor deposition; defect domains; desorption of precursor; hexagonal WS2; precursor accumulation

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Small Assunto da revista: ENGENHARIA BIOMEDICA Ano de publicação: 2020 Tipo de documento: Article

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