Enhanced carrier confinement and radiative recombination in GaN-based lasers by tailoring first-barrier doping.

Very limited 1-3 pairs of quantum-wells (QWs) are preferred for GaN-based laser diodes (LDs), which require more careful engineering of the carrier transport than LEDs. In this work, the first-barrier doping level of QWs is found to significantly affect the carrier confinement and distribution for GaN-based LDs. The first-barrier doping exceeding 2×1018 cm-3 will make the bottom QW return to the parasitic state, yielding unexpected photons absorption and even Auger recombination. The underlying physical mechanism is discussed in terms of the calculated energy-band diagram, carrier confinement, and distribution. And all the experimental findings are consistent with the physical model.