Design of a Capacitorless Dynamic Random Access Memory Based on Junctionless Dual-Gate Field-Effect Transistor with a Silicon-Germanium/Silicon Nanotube.

Lee, Sang Ho; Cho, Min Su; Mun, Hye Jin; Park, Jin; An, Hee Dae; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man

Lee, Sang Ho; Cho, Min Su; Mun, Hye Jin; Park, Jin; An, Hee Dae; Jang, Jaewon; Bae, Jin-Hyuk; Kang, In Man.

Afiliação

Lee SH; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.
Cho MS; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.
Mun HJ; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.
Park J; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.
An HD; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.
Jang J; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.
Bae JH; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.
Kang IM; School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, 702-701, Republic of Korea.

J Nanosci Nanotechnol ; 21(8): 4235-4242, 2021 Aug 01.

Article em En | MEDLINE | ID: mdl-33714309

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Clinical_trials Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2021 Tipo de documento: Article

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