Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure.

Wang, Jiawei; Chen, Aitian; Li, Peisen; Zhang, Sen

Wang, Jiawei; Chen, Aitian; Li, Peisen; Zhang, Sen.

Afiliação

Wang J; College of Science, Zhejiang University of Technology, Hangzhou 310023, China.
Chen A; Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.
Li P; College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China.
Zhang S; College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China.

Materials (Basel) ; 14(16)2021 Aug 17.

Article em En | MEDLINE | ID: mdl-34443144

Palavras-chave

FM/FE multiferroic heterostructure; MTJ; magnetoelectric memory; straintronics; volatile and nonvolatile

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Materials (Basel) Ano de publicação: 2021 Tipo de documento: Article País de afiliação: China

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