Hexagonal Si-Ge Class of Semiconducting Alloys Prepared by Using Pressure and Temperature.

Serghiou, George; Odling, Nicholas; Reichmann, Hans Josef; Ji, Gang; Koch-Müller, Monika; Frost, Daniel J; Wright, Jonathan P; Boehler, Reinhard; Morgenroth, Wolfgang

Serghiou, George; Odling, Nicholas; Reichmann, Hans Josef; Ji, Gang; Koch-Müller, Monika; Frost, Daniel J; Wright, Jonathan P; Boehler, Reinhard; Morgenroth, Wolfgang.

Afiliação

Serghiou G; University of Edinburgh, School of Engineering, Kings Buildings, Robert Stevenson Road, Edinburgh, EH9 3FB, UK.
Odling N; University of Edinburgh, School of Geosciences, The Grant Institute, Kings Buildings, West Mains Road, Edinburgh, EH9 3JW, UK.
Reichmann HJ; Helmholtz Centre Potsdam, German Research Centre for Geosciences, Telegrafenberg, 14473, Potsdam, Germany.
Ji G; Univ. Lille, CNRS, INRA, ENSCL, UMR CNRS 8207, UMET, Unité Matériaux et Transformations, 59000, Lille, France.
Koch-Müller M; Helmholtz Centre Potsdam, German Research Centre for Geosciences, Telegrafenberg, 14473, Potsdam, Germany.
Frost DJ; Bayerisches Geoinstitut, University of Bayreuth, 95540, Bayreuth, Germany.
Wright JP; European Synchrotron Radiation Facility, 38043, Grenoble, France.
Boehler R; Oak Ridge National Laboratory, Bethel Valley Rd, Oak Ridge, TN 37830, USA.
Morgenroth W; Institute of Geosciences, Goethe University Frankfurt, 60438, Frankfurt am Main, Germany.

Chemistry ; 27(57): 14217-14224, 2021 Oct 13.

Article em En | MEDLINE | ID: mdl-34459046

Palavras-chave

alloys; diffraction; high-pressure and -temperature chemistry; materials synthesis; reactivity; solid solutions

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Chemistry Assunto da revista: QUIMICA Ano de publicação: 2021 Tipo de documento: Article País de afiliação: Reino Unido

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