Interface effects of Schottky devices built from MoS<sub>2</sub>and high work function metals.

Li, Y D; Zhen, W L; Weng, S R; Hu, H J; Niu, R; Yue, Z L; Xu, F; Zhu, W K; Zhang, C J

Interface effects of Schottky devices built from MoS₂and high work function metals.

Li, Y D; Zhen, W L; Weng, S R; Hu, H J; Niu, R; Yue, Z L; Xu, F; Zhu, W K; Zhang, C J.

Afiliação

Li YD; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Zhen WL; University of Science and Technology of China, Hefei 230026, People's Republic of China.
Weng SR; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Hu HJ; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Niu R; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Yue ZL; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Xu F; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Zhu WK; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.
Zhang CJ; High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, People's Republic of China.

J Phys Condens Matter ; 34(16)2022 Feb 21.

Article em En | MEDLINE | ID: mdl-35105834

Palavras-chave

Schottky diodes; doping concentration; two-dimensional materials; van der Waals interface

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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Phys Condens Matter Assunto da revista: BIOFISICA Ano de publicação: 2022 Tipo de documento: Article

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