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Liberating a hidden antiferroelectric phase with interfacial electrostatic engineering.
Mundy, Julia A; Grosso, Bastien F; Heikes, Colin A; Ferenc Segedin, Dan; Wang, Zhe; Shao, Yu-Tsun; Dai, Cheng; Goodge, Berit H; Meier, Quintin N; Nelson, Christopher T; Prasad, Bhagwati; Xue, Fei; Ganschow, Steffen; Muller, David A; Kourkoutis, Lena F; Chen, Long-Qing; Ratcliff, William D; Spaldin, Nicola A; Ramesh, Ramamoorthy; Schlom, Darrell G.
Afiliação
  • Mundy JA; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.
  • Grosso BF; Department of Physics, Harvard University, Cambridge, MA 02138, USA.
  • Heikes CA; Department of Materials, ETH Zürich, Zürich CH-8093, Switzerland.
  • Ferenc Segedin D; NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, MD 20878, USA.
  • Wang Z; Department of Physics, Harvard University, Cambridge, MA 02138, USA.
  • Shao YT; Department of Physics, University of California, Berkeley, Berkeley, CA 94720, USA.
  • Dai C; School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
  • Goodge BH; School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
  • Meier QN; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
  • Nelson CT; School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
  • Prasad B; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA.
  • Xue F; Department of Materials, ETH Zürich, Zürich CH-8093, Switzerland.
  • Ganschow S; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830, USA.
  • Muller DA; Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, CA 94720, USA.
  • Kourkoutis LF; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA.
  • Chen LQ; Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany.
  • Ratcliff WD; School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
  • Spaldin NA; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA.
  • Ramesh R; School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA.
  • Schlom DG; Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA.
Sci Adv ; 8(5): eabg5860, 2022 Feb 04.
Article em En | MEDLINE | ID: mdl-35108054
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. By confining thin layers of BiFeO3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Sci Adv Ano de publicação: 2022 Tipo de documento: Article País de afiliação: Estados Unidos