Extraction of Interface-Trap Densities of the Stacked Bonding Structure in 3D Integration Using High-Frequency Capacitance-Voltage Technique.
Micromachines (Basel)
; 13(2)2022 Feb 06.
Article
em En
| MEDLINE
| ID: mdl-35208387
ABSTRACT
An extraction method of the interface-trap densities (Dit) of the stacked bonding structure in 3D integration using high-frequency capacitance-voltage technique is proposed. First, an accurate high-frequency capacitance-voltage model is derived. Next, by numerically solving the charge-balance equation and charge conservation equation, Dit is extracted by fitting the measured and calculated capacitance-voltage curves based on the derived model. Subsequently, the accuracy of the derived model is verified by the agreements between the analytical results and TCAD simulation results. The average extraction error proves the precision and efficiency of the extraction method. Finally, the stacked bonding structure has been fabricated, and Dit at the interface between silicon and insulator is extracted to diagnose and calibrate the fabrication processes.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Micromachines (Basel)
Ano de publicação:
2022
Tipo de documento:
Article
País de afiliação:
China