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Correction: All-solution-processed, flexible thin-film transistor based on PANI/PETA as gate/gate insulator.
Hong, Jin-Yong; Shin, Kyoung-Hwan; Yoon, Dai Gun; Chin, Byung Doo; Kim, Sung Hyun.
Afiliação
  • Hong JY; Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology 77 Massachusetts Avenue Cambridge MA 02139 USA.
  • Shin KH; School of Chemical and Biological Engineering, Seoul National University Seoul 151-747 Republic of Korea.
  • Yoon DG; Department of Polymer Science and Engineering, Dankook University Youngin 448-701 Republic of Korea bdchin@dankook.ac.kr.
  • Chin BD; Department of Polymer Science and Engineering, Dankook University Youngin 448-701 Republic of Korea bdchin@dankook.ac.kr.
  • Kim SH; Department of Chemistry, College of Natural Sciences, Seoul National University Seoul 151-747 Republic of Korea shkim75@snu.ac.kr.
RSC Adv ; 9(7): 3856, 2019 Jan 25.
Article em En | MEDLINE | ID: mdl-35532468
[This corrects the article DOI: 10.1039/C5RA23848J.].
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: RSC Adv Ano de publicação: 2019 Tipo de documento: Article
Texto completo
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: RSC Adv Ano de publicação: 2019 Tipo de documento: Article