Strain-induced spin-gapless semiconductors and pure thermal spin-current in magnetic black arsenic-phosphorus monolayers.
Phys Chem Chem Phys
; 24(22): 13897-13904, 2022 Jun 08.
Article
em En
| MEDLINE
| ID: mdl-35621115
ABSTRACT
Spin-gapless semiconductor (SGS) materials are regarded as the most promising candidates for ideal massless and dissipationless states towards low-power spintronic device applications. Here, we propose a spin-gapless semiconducting black arsenic-phosphorus (AsP) monolayer halogenated by chlorine (Cl) adatoms and reveal the perfect spin Seebeck effect induced by its SGS character to produce pure thermal spin-current using first-principles calculations. Our results show that Cl atoms prefer to adsorb P atoms rather than As atoms in the AsP monolayer, behaving as a ferromagnetic semiconductor. The As-adsorbed AsP monolayer as an ideal SGS material with parabolic-type energy dispersion can be utilized to realize symmetrical spin Seebeck current for perfect pure thermal spin-current even at an extremely low on-off temperature. Moreover, in-plane strain engineering can effectively manipulate the electronic structures of the P-absorbed AsP monolayer for perfect parabolic-type SGS similar to As-adsorbed AsP, and to obtain the relevant thermoelectric effect. These distinct features suggest the potential applications of the Cl-halogenated AsP monolayer with the SGS character in low-power spin-caloritronic devices.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Phys Chem Chem Phys
Assunto da revista:
BIOFISICA
/
QUIMICA
Ano de publicação:
2022
Tipo de documento:
Article