Your browser doesn't support javascript.
loading
Interface engineering of 9X stacked 3D NAND flash memory using hydrogen post-treatment annealing.
Choi, Saeyan; Kim, Seungsob; Bang, Seain; Kim, Jungchun; Park, Dong Geun; Jin, Seunghee; Kim, Min Jung; Kwon, Eunmee; Lee, Jae Woo.
Afiliação
  • Choi S; Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
  • Kim S; R&D Division, SK Hynix Semiconductor Inc., San 136-1 Ami, Bubal, Icheon, Gyeonggi 467-701, Republic of Korea.
  • Bang S; Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
  • Kim J; Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
  • Park DG; Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
  • Jin S; Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
  • Kim MJ; Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
  • Kwon E; R&D Division, SK Hynix Semiconductor Inc., San 136-1 Ami, Bubal, Icheon, Gyeonggi 467-701, Republic of Korea.
  • Lee JW; Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
Nanotechnology ; 34(2)2022 Oct 31.
Article em En | MEDLINE | ID: mdl-36198255

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2022 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nanotechnology Ano de publicação: 2022 Tipo de documento: Article