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Non-volatile electric-field control of inversion symmetry.
Caretta, Lucas; Shao, Yu-Tsun; Yu, Jia; Mei, Antonio B; Grosso, Bastien F; Dai, Cheng; Behera, Piush; Lee, Daehun; McCarter, Margaret; Parsonnet, Eric; K P, Harikrishnan; Xue, Fei; Guo, Xiangwei; Barnard, Edward S; Ganschow, Steffen; Hong, Zijian; Raja, Archana; Martin, Lane W; Chen, Long-Qing; Fiebig, Manfred; Lai, Keji; Spaldin, Nicola A; Muller, David A; Schlom, Darrell G; Ramesh, Ramamoorthy.
Afiliação
  • Caretta L; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA. lucas_caretta@brown.edu.
  • Shao YT; School of Engineering, Brown University, Providence, RI, USA. lucas_caretta@brown.edu.
  • Yu J; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
  • Mei AB; Mork Family Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, CA, USA.
  • Grosso BF; Department of Physics, University of Texas, Austin, TX, USA.
  • Dai C; Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
  • Behera P; Department of Materials, ETH Zurich, Zurich, Switzerland.
  • Lee D; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • McCarter M; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
  • Parsonnet E; Department of Physics, University of Texas, Austin, TX, USA.
  • K P H; Department of Physics, University of California, Berkeley, CA, USA.
  • Xue F; Department of Physics, University of California, Berkeley, CA, USA.
  • Guo X; School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
  • Barnard ES; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • Ganschow S; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Hong Z; Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, China.
  • Raja A; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Martin LW; Leibniz-Institut für Kristallzüchtung, Berlin, Germany.
  • Chen LQ; State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, China.
  • Fiebig M; Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Lai K; Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
  • Spaldin NA; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA.
  • Muller DA; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA, USA.
  • Schlom DG; Department of Materials, ETH Zurich, Zurich, Switzerland.
  • Ramesh R; Department of Physics, University of Texas, Austin, TX, USA.
Nat Mater ; 22(2): 207-215, 2023 Feb.
Article em En | MEDLINE | ID: mdl-36536139
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Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos
Texto completo
Imprimir
XML
PubMed Links
Buscar no Google

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nat Mater Assunto da revista: CIENCIA / QUIMICA Ano de publicação: 2023 Tipo de documento: Article País de afiliação: Estados Unidos