Mechanically robust stretchable semiconductor metallization for skin-inspired organic transistors.
Sci Adv
; 8(51): eade2988, 2022 Dec 21.
Article
em En
| MEDLINE
| ID: mdl-36542706
ABSTRACT
Despite recent remarkable advances in stretchable organic thin-film field-effect transistors (OTFTs), the development of stretchable metallization remains a challenge. Here, we report a highly stretchable and robust metallization on an elastomeric semiconductor film based on metal-elastic semiconductor intermixing. We found that vaporized silver (Ag) atom with higher diffusivity than other noble metals (Au and Cu) forms a continuous intermixing layer during thermal evaporation, enabling highly stretchable metallization. The Ag metallization maintains a high conductivity (>104 S/cm) even under 100% strain and successfully preserves its conductivity without delamination even after 10,000 stretching cycles at 100% strain and several adhesive tape tests. Moreover, a native silver oxide layer formed on the intermixed Ag clusters facilitates efficient hole injection into the elastomeric semiconductor, which transcends previously reported stretchable source and drain electrodes for OTFTs.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Sci Adv
Ano de publicação:
2022
Tipo de documento:
Article