Study on the decisive factor for metal-insulator transitions in a LaVO3 Mott-Hubbard insulator.

The decisive physical parameters on electrical conduction in a LaVO3 Mott-Hubbard system are systematically investigated by analyzing pure, Ca-, and Sr-doped samples. The Rietveld refinement of the X-ray diffraction data indicates that a drastic change occurs along the c-axis to reduce the octahedral tilt thereby relaxing the distortion for the doped compounds, in contrast to an insignificant change in the in-plane distortion. From electrical, optical, and photoemission measurements, both Ca and Sr-doping in LaVO3 induce insulator to metal transitions under a similar hole carrier concentration as suppressing the Mott-gap excitation. Fitting results on temperature-dependent resistivity based on various conduction models indicate that the most localized conduction behavior takes place for the highly distorted pure LaVO3, while disordered Fermi liquid behavior starts to appear for moderately distorted Ca-doped LaVO3. The least distorted Sr-doped LaVO3 exhibits fully delocalized conduction governed by a non-Fermi-liquid-like behavior in the whole temperature range. Our analysis indicates that the difference in the transport mechanism arises from the differing degree of hybridization of the V 3d and O 2p states in the pure and doped systems, strongly associated with the structural distortion.