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Electrochemically Stable Ligands of ZnO Electron-Transporting Layers for Quantum-Dot Light-Emitting Diodes.
Chen, Desui; Ma, Luying; Chen, Yunhua; Zhou, Xiaoqi; Xing, Shiyu; Deng, Yunzhou; Hao, Yanlei; Pu, Chaodan; Kong, Xueqian; Jin, Yizheng.
Afiliação
  • Chen D; Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Ma L; Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Chen Y; Zhejiang Key Laboratory for Excited-State Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Zhou X; Zhejiang Key Laboratory for Excited-State Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Xing S; Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Deng Y; Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Hao Y; Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Pu C; School of Physical Science and Technology, Shanghai Tech University, Shanghai 201210, People's Republic of China.
  • Kong X; Zhejiang Key Laboratory for Excited-State Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
  • Jin Y; Zhejiang Key Laboratory for Excited-State Materials, State Key Laboratory of Silicon Materials, Department of Chemistry, Zhejiang University, Hangzhou 310027, People's Republic of China.
Nano Lett ; 23(3): 1061-1067, 2023 Feb 08.
Article em En | MEDLINE | ID: mdl-36662173

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Guideline / Prognostic_studies Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Guideline / Prognostic_studies Idioma: En Revista: Nano Lett Ano de publicação: 2023 Tipo de documento: Article