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Disorder-tuned conductivity in amorphous monolayer carbon.
Tian, Huifeng; Ma, Yinhang; Li, Zhenjiang; Cheng, Mouyang; Ning, Shoucong; Han, Erxun; Xu, Mingquan; Zhang, Peng-Fei; Zhao, Kexiang; Li, Ruijie; Zou, Yuting; Liao, PeiChi; Yu, Shulei; Li, Xiaomei; Wang, Jianlin; Liu, Shizhuo; Li, Yifei; Huang, Xinyu; Yao, Zhixin; Ding, Dongdong; Guo, Junjie; Huang, Yuan; Lu, Jianming; Han, Yuyan; Wang, Zhaosheng; Cheng, Zhi Gang; Liu, Junjiang; Xu, Zhi; Liu, Kaihui; Gao, Peng; Jiang, Ying; Lin, Li; Zhao, Xiaoxu; Wang, Lifen; Bai, Xuedong; Fu, Wangyang; Wang, Jie-Yu; Li, Maozhi; Lei, Ting; Zhang, Yanfeng; Hou, Yanglong; Pei, Jian; Pennycook, Stephen J; Wang, Enge; Chen, Ji; Zhou, Wu; Liu, Lei.
Afiliação
  • Tian H; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Ma Y; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China.
  • Li Z; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Cheng M; School of Physics, Peking University, Beijing, China.
  • Ning S; Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore.
  • Han E; School of Physics, Peking University, Beijing, China.
  • Xu M; School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing, China.
  • Zhang PF; Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
  • Zhao K; Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
  • Li R; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Zou Y; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
  • Liao P; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Yu S; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Li X; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
  • Wang J; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
  • Liu S; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Li Y; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Huang X; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Yao Z; Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China.
  • Ding D; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Guo J; Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan, China.
  • Huang Y; School of Physics, Peking University, Beijing, China.
  • Lu J; Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology, Taiyuan, China.
  • Han Y; Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, China.
  • Wang Z; School of Physics, Peking University, Beijing, China.
  • Cheng ZG; Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, China.
  • Liu J; Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei, China.
  • Xu Z; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
  • Liu K; Songshan Lake Materials Laboratory, Dongguan, China.
  • Gao P; Songshan Lake Materials Laboratory, Dongguan, China.
  • Jiang Y; Songshan Lake Materials Laboratory, Dongguan, China.
  • Lin L; School of Physics, Peking University, Beijing, China.
  • Zhao X; Songshan Lake Materials Laboratory, Dongguan, China.
  • Wang L; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
  • Bai X; Songshan Lake Materials Laboratory, Dongguan, China.
  • Fu W; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
  • Wang JY; International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China.
  • Li M; Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, China.
  • Lei T; International Center for Quantum Materials, Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, China.
  • Zhang Y; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Hou Y; School of Materials Science and Engineering, Peking University, Beijing, China.
  • Pei J; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
  • Pennycook SJ; Songshan Lake Materials Laboratory, Dongguan, China.
  • Wang E; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
  • Chen J; Songshan Lake Materials Laboratory, Dongguan, China.
  • Zhou W; School of Materials Science and Engineering, Tsinghua University, Beijing, China.
  • Liu L; Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, China.
Nature ; 615(7950): 56-61, 2023 03.
Article em En | MEDLINE | ID: mdl-36859579
ABSTRACT
Correlating atomic configurations-specifically, degree of disorder (DOD)-of an amorphous solid with properties is a long-standing riddle in materials science and condensed matter physics, owing to difficulties in determining precise atomic positions in 3D structures1-5. To this end, 2D systems provide insight to the puzzle by allowing straightforward imaging of all atoms6,7. Direct imaging of amorphous monolayer carbon (AMC) grown by laser-assisted depositions has resolved atomic configurations, supporting the modern crystallite view of vitreous solids over random network theory8. Nevertheless, a causal link between atomic-scale structures and macroscopic properties remains elusive. Here we report facile tuning of DOD and electrical conductivity in AMC films by varying growth temperatures. Specifically, the pyrolysis threshold temperature is the key to growing variable-range-hopping conductive AMC with medium-range order (MRO), whereas increasing the temperature by 25 °C results in AMC losing MRO and becoming electrically insulating, with an increase in sheet resistance of 109 times. Beyond visualizing highly distorted nanocrystallites embedded in a continuous random network, atomic-resolution electron microscopy shows the absence/presence of MRO and temperature-dependent densities of nanocrystallites, two order parameters proposed to fully describe DOD. Numerical calculations establish the conductivity diagram as a function of these two parameters, directly linking microstructures to electrical properties. Our work represents an important step towards understanding the structure-property relationship of amorphous materials at the fundamental level and paves the way to electronic devices using 2D amorphous materials.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2023 Tipo de documento: Article País de afiliação: China